regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 3.0 0.275 0.65 1.1 6.4 4.4 ? a?? ?? drain source gate ?? ? ? a ? ? ?? v v a a a a a w c c g FY7BCH-02B 20 10 7 49 7 1.5 6.0 1.6 C55~+150 C55~+150 0.035 2.5v drive v dss ............................................................ ...................... 20v r ds (on) (max) ............................................................ .. 21m w i d ............................................................ ................................ 7a mitsubishi power mosfet FY7BCH-02B high-speed switching use nch power mosfet application motor control, lamp control, solenoid control, dc-dc converte, etc tssop8 outline drawing dimensions in mm v gs = 0v v ds = 0v l = 10 m h typical value parameter conditions symbol ratings unit v dss v gss i d i dm i da i s i sm p d t ch t stg drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight maximum ratings (tc = 25 c) l l l l
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FY7BCH-02B high-speed switching use nch power mosfet 0.8 17 21 0.119 20 1350 400 300 30 80 150 160 0.75 50 i d = 1ma, v gs = 0v v gs = 10v, v ds = 0v v ds = 20v, v gs = 0v i d = 1ma, v ds = 10v i d = 7a, v gs = 4v i d = 3.5a, v gs = 2.5v i d = 7a, v gs = 4v i d = 7a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 10v, i d = 3.5a, v gs = 4v, r gen = r gs = 50 w i s = 1.5a, v gs = 0v channel to ambiet i s = 1.5a, d is /d t = C50a/ m s 20 0.5 v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 0.1 0.1 1.3 21 30 0.147 1.10 78.1 drain-source breakdown voltage gate -source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol parameter test conditions v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-a) t rr limits min. typ. max. unit electrical characteristics (tch = 25 c)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FY7BCH-02B high-speed switching use nch power mosfet 0 8 16 24 32 40 10 ? 10 1 2 10 0 357 2 10 2 357 23 57 v gs = 2.5v tc = 25 c pulse test 4v 0 0.4 0.8 1.2 1.6 2.0 0 1.0 2.0 3.0 4.0 5.0 tc = 25 c pulse test i d = 14a 3a 7a 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 2v p d = 1.6w 1.5v 2 3 5 7 7 2 10 0 357 2 10 1 357 23 10 0 2 3 5 10 1 2 3 5 7 7 10 ? tw = 10 m s t c = 25 c single pulse 100 m s 100ms 10ms 1ms dc 0 0.4 0.8 1.2 1.6 2.0 0 20050 100 150 v gs = 4v,3v,2.5v 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 3v p d = 1.6w 2v 2.5v 1.5v v gs = 4v tc = 25 c pulse test tc = 25 c pulse test drain current i d (a) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m w ) on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain-source voltage v ds (v) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) power dissipation derating curve case temperature t c ( c) power dissipation p d (w) performance curves
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FY7BCH-02B high-speed switching use nch power mosfet 10 0 10 1 23 57 10 2 23 57 10 0 10 1 2 3 5 7 10 2 2 3 5 7 v ds =10v pulse test 0 10 20 30 40 50 0 1.0 2.0 3.0 4.0 5.0 tc = 25 c v ds = 10v pulse test 10 ? 2 10 0 357 2 10 1 357 2 2 3 3 3 5 5 7 7 10 2 10 3 2 2 ciss coss crss tch = 25 c v gs = 0v f = 1mh z 10 ? 10 0 23 57 10 1 23 57 10 1 10 0 2 3 3 7 5 2 10 2 7 2 3 5 t d(off) t d(on) t r tch = 25 c v gs = 4v v dd = 10v r gen = r gs = 50 w t f 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 125 c 75 c 25 c v gs = 0v t c = 25 c pulse test 0 1.0 2.0 3.0 4.0 5.0 0 8 16 24 32 40 7v 10v 15v v ds = i d =7a tch = 25 c t c = 25 c, 75 c,125 c t c = capacitance vs. drain-source voltage (typical) source-drain diode forward characteristics (typical) gate-source voltage vs.gate charge (typical) forward transfer admittance ? y fs ? (s) forward transfer admittance vs.drain current (typical) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) transfer characteristics (typical) drain-source voltage v ds (v) capacitance ciss, coss, crss (pf) switching characteristics (typical) drain current i d (a) switching time (ns) source-drain voltage v sd (v) source current i s (a) gate charge q g (nc) gate-source voltage v gs (v)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FY7BCH-02B high-speed switching use nch power mosfet 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 23 57 10 3 10 ? 10 ? 10 ? 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 5 0 100 150 v gs = 0v i d = 1ma single pulse 0 0.4 0.8 1.2 1.6 2.0 ?0 0 5 0 100 150 v ds = 10v i d = 1ma 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 ?0 0 5 0 100 150 v gs = 4v i d = 7a pulse test p dm tw d = t tw t transient thermal impedance characteristics pulse width tw (s) transient thermal impedance z th (ch-a) ( c/w) channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) threshold voltage vs. channel temperature (typical) channel temperature tch ( c) channel temperature tch ( c) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (t c) drain-source on-state resistance r ds (on) (25 c) drain-source breakdown voltage v ( br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) gate-source threshold voltage v gs (th) (v)
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